Infineon Technologies IPB90N06S4L04ATMA2

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

1900pF @ 15V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

9A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

PowerPAK® SO-8

Vgs(th) (Max) @ Id

1.8V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

8.25mOhm @ 15A, 10V

Series

TrenchFET®

Power Dissipation (Max)

1.8W (Ta)

FET Type

N-Channel

Supplier Device Package

PowerPAK® SO-8

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

19nC @ 4.5V

Vgs (Max)

±12V

Drain to Source Voltage (Vdss)

30V