Infineon Technologies IPB80N08S406ATMA1

Product Details

Series

HEXFET®

Supplier Device Package

TO-220AB

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

69nC @ 10V

Packaging

Tube

Drain to Source Voltage (Vdss)

60V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2290pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

79A (Tc)

Part Status

Not For New Designs

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

4V @ 100µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

8.4mOhm @ 47A, 10V

Power Dissipation (Max)

110W (Tc)