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Infineon Technologies IPB80N07S405ATMA1
MOSFET N-CH TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2875pF @ 800V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 12A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 15V
- Mounting Type
- Surface Mount
- Package / Case
- 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
- Vgs(th) (Max) @ Id
- 5.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.05Ohm @ 6A, 15V
- Series
- SMPD
- Power Dissipation (Max)
- 940W
- FET Type
- N-Channel
- Supplier Device Package
- 16-SMPD
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 77nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 1000V