Infineon Technologies IPB80N06S405ATMA2

Product Details

FET Feature

-

Drive Voltage (Max Rds On, Min Rds On)

10V

Part Status

Not For New Designs

Mounting Type

Through Hole

Package / Case

TO-262-3 Full Pack, I²Pak

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

650mOhm @ 3.5A, 10V

Series

aMOS™

Power Dissipation (Max)

25W (Tc)

FET Type

N-Channel

Gate Charge (Qg) (Max) @ Vgs

9.2nC @ 10V

Packaging

Tube

Drain to Source Voltage (Vdss)

650V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

434pF @ 100V

Technology

MOSFET (Metal Oxide)

Current - Continuous Drain (Id) @ 25°C

7A (Tc)