Infineon Technologies IPB80N04S304ATMA1

Product Details

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

1V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

5.5mOhm @ 71A, 10V

Series

HEXFET®

Power Dissipation (Max)

3.8W (Ta), 200W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

76nC @ 4.5V

Vgs (Max)

±16V

Drain to Source Voltage (Vdss)

30V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3720pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

140A (Tc)