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Infineon Technologies IPB80N03S4L02ATMA1
MOSFET N-CH 30V 80A TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.81
- Stock
- 0
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 40V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4300pF @ 20V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 15A (Ta), 220A (Tc)
- Part Status
- Discontinued at Digi-Key
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 3.7V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 3.9mOhm @ 20A, 10V
- Series
- -
- Power Dissipation (Max)
- 2.1W (Ta), 417W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-263 (D²Pak)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 86nC @ 10V