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Infineon Technologies IPB70N10S3L12ATMA1
MOSFET N-CH 100V 70A TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.93
- Stock
- 0
Product Details
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 1.2V @ 350µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.95mOhm @ 50A, 4.5V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 2.8W (Ta), 104W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TDSON-8-1
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 85nC @ 4.5V
- Vgs (Max)
- ±12V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 13000pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 30A (Ta), 100A (Tc)