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Infineon Technologies IPB70N04S406ATMA1

MOSFET N-CH 40V 70A TO263-3-2

Manufacturer
Infineon Technologies
Datasheet
Price
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Stock
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Product Details

Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
3700pF @ 20V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
40A (Tc)
Part Status
Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
8-PowerVDFN
Vgs(th) (Max) @ Id
4V @ 36µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
4.2mOhm @ 20A, 10V
Series
OptiMOS™
Power Dissipation (Max)
2.1W (Ta), 69W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-TSDSON-8
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
46nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
40V