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Infineon Technologies IPB65R310CFDAATMA1
MOSFET N-CH TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.36
- Stock
- 0
Product Details
- Series
- -
- Power Dissipation (Max)
- 3.2W (Ta), 139W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 5-DFN (5x6) (8-SOFL)
- Packaging
- -
- Gate Charge (Qg) (Max) @ Vgs
- 63nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 60V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4860pF @ 30V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 28A (Ta), 185A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN, 5 Leads
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.8mOhm @ 49A, 10V