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Infineon Technologies IPB65R225C7ATMA2
MOSFET N-CH 650V 11A TO-263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Active
- Mounting Type
- Through Hole
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 6Ohm @ 500mA, 10V
- Series
- -
- Power Dissipation (Max)
- 1W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-92-3
- Packaging
- Tape & Reel (TR)
- Drain to Source Voltage (Vdss)
- 120V
- Vgs (Max)
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds
- 125pF @ 25V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 230mA (Tj)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 10V