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Infineon Technologies IPB65R225C7ATMA1
MOSFET N-CH 650V 11A TO-263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 75mOhm @ 12A, 10V
- Series
- PowerTrench®
- Power Dissipation (Max)
- 42W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-252-4L
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 28.9nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1465pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 15.3A (Tc)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-5, DPak (4 Leads + Tab), TO-252AD