Infineon Technologies IPB65R190CFDATMA1

Product Details

Vgs(th) (Max) @ Id

2.4V @ 110µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

10.5mOhm @ 50A, 10V

Series

OptiMOS™

Power Dissipation (Max)

156W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TDSON-8-1

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

53nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3900pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

11.4A (Ta), 90A (Tc)

Part Status

Not For New Designs

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN