Infineon Technologies IPB65R190C7ATMA2

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2410pF @ 125V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

24A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

8-PowerTDFN

Vgs(th) (Max) @ Id

4V @ 90µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

67mOhm @ 24A, 10V

Series

OptiMOS™

Power Dissipation (Max)

150W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TDSON-8-1

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

250V