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Infineon Technologies IPB65R190C7ATMA1
MOSFET N-CH TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Vgs(th) (Max) @ Id
- 1.5V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 65mOhm @ 4A, 4.5V
- Power Dissipation (Max)
- 1.2W (Ta)
- Series
- Automotive, AEC-Q101, PowerTrench®
- Supplier Device Package
- TSOT-23-6
- FET Type
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 9nC @ 4.5V
- Vgs (Max)
- ±8V
- Drain to Source Voltage (Vdss)
- 20V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 630pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 4A (Ta)