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Infineon Technologies IPB65R150CFDATMA2
HIGH POWER_LEGACY
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.85
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 10A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 720mOhm @ 5A, 10V
- Series
- π-MOSVII
- Power Dissipation (Max)
- 45W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220SIS
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 24nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 550V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1200pF @ 25V