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Infineon Technologies IPB65R150CFDAATMA1
MOSFET N-CH TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 2.39
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 8.4mOhm @ 77A, 10V
- Series
- HEXFET®, StrongIRFET™
- Power Dissipation (Max)
- 441W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D²PAK (TO-263AB)
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 270nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 135V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 9700pF @ 50V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 129A (Tc)
- Part Status
- Discontinued at Digi-Key
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB