Infineon Technologies IPB65R065C7ATMA2

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3020pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

28A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

4-PowerTSFN

Vgs(th) (Max) @ Id

4V @ 850µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

70mOhm @ 8.5A, 10V

Series

CoolMOS™ C7

Power Dissipation (Max)

169W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-VSON-4

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V