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Infineon Technologies IPB60R600CPATMA1
MOSFET N-CH 600V 6.1A TO263
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 83µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 11mOhm @ 75A, 10V
- Series
- OptiMOS™
- Power Dissipation (Max)
- 136W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO252-3
- Packaging
- Cut Tape (CT)
- Gate Charge (Qg) (Max) @ Vgs
- 65nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 120V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4310pF @ 60V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 75A (Tc)