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Infineon Technologies IPB60R299CPAATMA1
MOSFET N-CH TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.41
- Stock
- 0
Product Details
- Rds On (Max) @ Id, Vgs
- 8mOhm @ 50A, 10V
- Series
- Automotive, AEC-Q101, TrenchMOS™
- Power Dissipation (Max)
- 272W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- D2PAK
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 116nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 55V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 4200pF @ 25V
- FET Feature
- Current Sensing
- Current - Continuous Drain (Id) @ 25°C
- 75A (Tc)
- Part Status
- Last Time Buy
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Operating Temperature
- -55°C ~ 175°C (TJ)