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Infineon Technologies IPB60R160C6ATMA1
MOSFET N-CH 600V 23.8A TO263
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 3.46
- Stock
- 637
Product Details
- Series
- HEXFET®
- Power Dissipation (Max)
- 3.1W (Ta), 170W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- D2PAK
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 230nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 2780pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 38A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 60mOhm @ 38A, 10V