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Infineon Technologies IPB60R099CPATMA1

MOSFET N-CH 600V 31A D2PAK

Manufacturer
Infineon Technologies
Datasheet
Price
0
Stock
637

Product Details

Rds On (Max) @ Id, Vgs
65mOhm @ 15.9A, 10V
Series
CoolMOS™ P7
Power Dissipation (Max)
201W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-VSON-4
Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
67nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
650V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2895pF @ 400V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
41A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
4-PowerTSFN
Vgs(th) (Max) @ Id
4V @ 800µA
Operating Temperature
-40°C ~ 150°C (TJ)