Infineon Technologies IPB60R099C6ATMA1

Product Details

Mounting Type

Surface Mount

Package / Case

TO-263-4, D²Pak (3 Leads + Tab), TO-263AA

Vgs(th) (Max) @ Id

3.2V @ 250µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

2.4mOhm @ 100A, 10V

Series

NexFET™

Power Dissipation (Max)

375W (Tc)

FET Type

N-Channel

Supplier Device Package

DDPAK/TO-263-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

153nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

12000pF @ 50V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

200A (Ta)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V