Infineon Technologies IPB60R060C7ATMA1

Product Details

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4.5V @ 200µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

65mOhm @ 17.1A, 10V

Series

CoolMOS™ C7

Power Dissipation (Max)

171W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO263-3

Packaging

Digi-Reel®

Gate Charge (Qg) (Max) @ Vgs

64nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3020pF @ 400V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

33A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount