Infineon Technologies IPB600N25N3GATMA1

Product Details

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

718pF @ 400V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

10-PowerSOP Module

Vgs(th) (Max) @ Id

4V @ 210µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

190mOhm @ 4.2A, 10V

Series

CoolMOS™ G7

Power Dissipation (Max)

76W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-HDSOP-10-1

Packaging

Cut Tape (CT)

Gate Charge (Qg) (Max) @ Vgs

18nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

600V