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Infineon Technologies IPB50R199CPATMA1
MOSFET N-CH 550V 17A TO-263
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.55
- Stock
- 0
Product Details
- Series
- NexFET™
- Power Dissipation (Max)
- 3.1W (Ta), 191W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-VSON-CLIP (5x6)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 39nC @ 4.5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 7020pF @ 15V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 100A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 1.65V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 1.4mOhm @ 40A, 10V