Infineon Technologies IPB50N12S3L15ATMA1

Product Details

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Mounting Type

Surface Mount

Package / Case

DirectFET™ Isometric MX

Vgs(th) (Max) @ Id

2.35V @ 150µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.4mOhm @ 38A, 10V

Series

HEXFET®

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

FET Type

N-Channel

Supplier Device Package

DIRECTFET™ MX

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

68nC @ 4.5V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

25V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

5790pF @ 13V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

36A (Ta), 210A (Tc)