Infineon Technologies IPB22N03S4L15ATMA1

Product Details

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

100V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

8250pF @ 25V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

75A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4V @ 1mA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

8.8mOhm @ 25A, 10V

Series

TrenchMOS™

Power Dissipation (Max)

230W (Tc)

FET Type

N-Channel

Supplier Device Package

D2PAK

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

156nC @ 10V