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Infineon Technologies IPB200N25N3GATMA1
MOSFET N-CH 250V 64A TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Packaging
- Digi-Reel®
- Supplier Device Package
- D2PAK
- Vgs (Max)
- ±25V
- Gate Charge (Qg) (Max) @ Vgs
- 104nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 200V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 4329pF @ 50V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 61A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Base Part Number
- STB80N
- Vgs(th) (Max) @ Id
- 5V @ 250µA
- Operating Temperature
- 150°C (TJ)
- Series
- MDmesh™ V
- Rds On (Max) @ Id, Vgs
- 23mOhm @ 30.5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 190W (Tc)