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Infineon Technologies IPB180P04P4L02ATMA1
MOSFET P-CH 40V 180A TO263-7
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 5905
Product Details
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 2V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 180mOhm @ 4.9A, 5V
- Series
- -
- Power Dissipation (Max)
- 40W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- TO-220F
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 56nC @ 5V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 200V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1705pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9.8A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 5V
- Mounting Type
- Through Hole