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Infineon Technologies IPB180N08S402ATMA1
MOSFET N-CH TO263-7
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 5.06
- Stock
- 146
Product Details
- Vgs(th) (Max) @ Id
- 3.8V @ 130µA
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.3mOhm @ 100A, 10V
- Series
- OptiMOS™-5
- Power Dissipation (Max)
- 200W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-HSOF-8-1
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 110nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 80V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 7670pF @ 40V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 200A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerSFN