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Infineon Technologies IPB17N25S3100ATMA1
MOSFET N-CH TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0.86
- Stock
- 0
Product Details
- Vgs(th) (Max) @ Id
- 2.3V @ 500µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 2.6mOhm @ 21A, 10V
- Series
- U-MOSVII-H
- Power Dissipation (Max)
- 1.6W (Ta), 57W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SOP Advance (5x5)
- Packaging
- Tape & Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs
- 61nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 30V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 5200pF @ 10V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 42A (Ta)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerVDFN