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Infineon Technologies IPB120P04P4L03ATMA1
MOSFET P-CH 40V 120A TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 11084
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 42A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 20mOhm @ 42A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 170W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- D2PAK
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 180nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 55V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 3500pF @ 25V