Images are for reference only. See Product Specifications for product details
Infineon Technologies IPB120N06S4H1ATMA2
MOSFET N-CH 60V 120A TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.64
- Stock
- 0
Product Details
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11A (Tc)
- Part Status
- Not For New Designs
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Isolated Tab
- Vgs(th) (Max) @ Id
- 3.9V @ 680µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 450mOhm @ 7.1A, 10V
- Series
- CoolMOS™
- Power Dissipation (Max)
- 34W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PG-TO220-3
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 85nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 800V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1600pF @ 100V