Infineon Technologies IPB120N04S4L02ATMA1

Product Details

Series

OptiMOS™

Power Dissipation (Max)

136W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO220-3

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

55nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

75V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

3840pF @ 37.5V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-220-3

Vgs(th) (Max) @ Id

3.8V @ 70µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

6.2mOhm @ 73A, 10V