Infineon Technologies IPB110P06LMATMA1

Product Details

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

86nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

650V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

2340pF @ 100V

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

22.4A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id

4.5V @ 900µA

Operating Temperature

-40°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

150mOhm @ 9.3A, 10V

Series

Automotive, AEC-Q101, CoolMOS™

Power Dissipation (Max)

195.3W (Tc)

FET Type

N-Channel

Supplier Device Package

D²PAK (TO-263AB)