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Infineon Technologies IPB100N04S303ATMA1
MOSFET N-CH 40V 100A TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.46
- Stock
- 1000
Product Details
- Series
- MDmesh™
- Rds On (Max) @ Id, Vgs
- 1.75Ohm @ 2A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 60W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- DPAK
- Vgs (Max)
- ±30V
- Gate Charge (Qg) (Max) @ Vgs
- 5nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 800V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 177pF @ 100V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 4A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number
- STD5N
- Vgs(th) (Max) @ Id
- 5V @ 100µA
- Operating Temperature
- -55°C ~ 150°C (TJ)