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Infineon Technologies IPB067N08N3GATMA1
MOSFET N-CH 80V 80A TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 4122
Product Details
- Mounting Type
- Surface Mount
- Package / Case
- 8-SOIC (0.154", 3.90mm Width)
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 155mOhm @ 3A, 10V
- Series
- TrenchFET®
- Power Dissipation (Max)
- 1.56W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- 8-SO
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 50nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 250V
- Technology
- MOSFET (Metal Oxide)
- Current - Continuous Drain (Id) @ 25°C
- 2.1A (Ta)
- FET Feature
- -
- Drive Voltage (Max Rds On, Min Rds On)
- 6V, 10V
- Part Status
- Active