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Infineon Technologies IPB065N15N3GE8187ATMA1
MOSFET N-CH 150V 130A TO263-7
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Series
- SIPMOS®
- Power Dissipation (Max)
- 1.79W (Ta)
- FET Type
- N-Channel
- Supplier Device Package
- PG-SOT223-4
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 17.2nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 364pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 1.1A (Ta)
- Part Status
- Obsolete
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Vgs(th) (Max) @ Id
- 1.8V @ 400µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 700mOhm @ 1.1A, 10V