Images are for reference only. See Product Specifications for product details
Infineon Technologies IPB065N03LGATMA1
MOSFET N-CH 30V 50A TO-263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 11791
Product Details
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id
- 4V @ 360µA
- Operating Temperature
- 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 380mOhm @ 4.9A, 10V
- Series
- DTMOSV
- Power Dissipation (Max)
- 80W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- DPAK
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 20nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 590pF @ 300V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 9.7A (Tc)