Infineon Technologies IPB052N04NGATMA1

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

130A (Tc)

Part Status

Obsolete

Drive Voltage (Max Rds On, Min Rds On)

8V, 10V

Mounting Type

Surface Mount

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB

Vgs(th) (Max) @ Id

4V @ 270µA

Operating Temperature

-55°C ~ 175°C (TJ)

Rds On (Max) @ Id, Vgs

6.5mOhm @ 100A, 10V

Series

OptiMOS™

Power Dissipation (Max)

300W (Tc)

FET Type

N-Channel

Supplier Device Package

PG-TO263-7

Packaging

Tape & Reel (TR)

Gate Charge (Qg) (Max) @ Vgs

93nC @ 10V

Vgs (Max)

±20V

Drain to Source Voltage (Vdss)

150V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

7300pF @ 75V