Infineon Technologies IPB044N15N5ATMA1

Product Details

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

1000pF @ 25V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

12A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-220-3 Full Pack

Base Part Number

STP12

Vgs(th) (Max) @ Id

5V @ 50µA

Operating Temperature

-65°C ~ 150°C (TJ)

Series

MDmesh™

Rds On (Max) @ Id, Vgs

350mOhm @ 6A, 10V

FET Type

N-Channel

Power Dissipation (Max)

35W (Tc)

Packaging

Tube

Supplier Device Package

TO-220FP

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

39nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V