Infineon Technologies IPB042N10N3GATMA1

Product Details

Vgs(th) (Max) @ Id

3.3V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Series

NexFET™

Rds On (Max) @ Id, Vgs

6.4mOhm @ 16A, 10V

FET Type

N-Channel

Power Dissipation (Max)

3.3W (Ta), 125W (Tc)

Packaging

Digi-Reel®

Supplier Device Package

8-VSONP (5x6)

Vgs (Max)

±20V

Gate Charge (Qg) (Max) @ Vgs

48nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

3870pF @ 50V

Part Status

Active

Current - Continuous Drain (Id) @ 25°C

100A (Ta)

Mounting Type

Surface Mount

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Package / Case

8-PowerTDFN

Base Part Number

CSD19531