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Infineon Technologies IPB038N12N3GATMA1

MOSFET N-CH 120V 120A TO263-3

Manufacturer
Infineon Technologies
Datasheet
Price
0
Stock
539

Product Details

Packaging
Digi-Reel®
Gate Charge (Qg) (Max) @ Vgs
200nC @ 10V
Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
14600pF @ 25V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
10V
Mounting Type
Surface Mount
Package / Case
TO-263-7, D²Pak (6 Leads + Tab)
Vgs(th) (Max) @ Id
3.5V @ 275µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
2.5mOhm @ 100A, 10V
Series
Automotive, AEC-Q101, OptiMOS™
Power Dissipation (Max)
300W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-TO263-7-3