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Infineon Technologies IPB032N10N5ATMA1
MOSFET N-CH 100V 166A TO263-7
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 0
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 120mOhm @ 12A, 10V
- Series
- E
- Power Dissipation (Max)
- 156W (Tc)
- FET Type
- N-Channel
- Supplier Device Package
- PowerPAK® 8 x 8
- Packaging
- Digi-Reel®
- Gate Charge (Qg) (Max) @ Vgs
- 44nC @ 10V
- Vgs (Max)
- ±30V
- Drain to Source Voltage (Vdss)
- 600V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1600pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 24A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Surface Mount
- Package / Case
- 8-PowerTDFN
- Vgs(th) (Max) @ Id
- 5V @ 250µA