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Infineon Technologies IPB029N06N3GATMA1
MOSFET N-CH 60V 120A TO263-3
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 0
- Stock
- 2637
Product Details
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Series
- SuperFET® II
- Rds On (Max) @ Id, Vgs
- 380mOhm @ 5A, 10V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 106W (Tc)
- Packaging
- Digi-Reel®
- Supplier Device Package
- D-Pak
- Vgs (Max)
- ±20V
- Gate Charge (Qg) (Max) @ Vgs
- 45nC @ 10V
- Technology
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)
- 600V
- FET Feature
- -
- Input Capacitance (Ciss) (Max) @ Vds
- 1770pF @ 25V
- Part Status
- Active
- Current - Continuous Drain (Id) @ 25°C
- 10.2A (Tc)
- Mounting Type
- Surface Mount
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Base Part Number
- FCD380N60
- Vgs(th) (Max) @ Id
- 3.5V @ 250µA