Infineon Technologies IPB011N04LGATMA1

Product Details

Series

SuperMESH3™

Rds On (Max) @ Id, Vgs

750mOhm @ 4A, 10V

FET Type

N-Channel

Power Dissipation (Max)

30W (Tc)

Packaging

Tube

Supplier Device Package

I2PAKFP (TO-281)

Vgs (Max)

±30V

Gate Charge (Qg) (Max) @ Vgs

42nC @ 10V

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

620V

FET Feature

-

Input Capacitance (Ciss) (Max) @ Vds

1250pF @ 50V

Part Status

Obsolete

Current - Continuous Drain (Id) @ 25°C

8.4A (Tc)

Mounting Type

Through Hole

Drive Voltage (Max Rds On, Min Rds On)

10V

Package / Case

TO-262-3 Full Pack, I²Pak

Base Part Number

STFI10N

Vgs(th) (Max) @ Id

4.5V @ 100µA

Operating Temperature

-55°C ~ 150°C (TJ)