Images are for reference only. See Product Specifications for product details
Infineon Technologies IPAW60R360P7SXKSA1
MOSFET N-CHANNEL 650V 9A TO220
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.11
- Stock
- 267
Product Details
- Vgs(th) (Max) @ Id
- 4V @ 250µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 205mOhm @ 7.8A, 10V
- Series
- HEXFET®
- Power Dissipation (Max)
- 66W (Tc)
- FET Type
- P-Channel
- Supplier Device Package
- IPAK (TO-251)
- Packaging
- Tube
- Gate Charge (Qg) (Max) @ Vgs
- 58nC @ 10V
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 100V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 760pF @ 25V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 13A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA