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Infineon Technologies IPA80R1K2P7XKSA1

MOSFET N-CH 800V 4.5A TO220

Manufacturer
Infineon Technologies
Datasheet
Price
1.32
Stock
392

Product Details

Vgs (Max)
±20V
Drain to Source Voltage (Vdss)
100V
Technology
MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds
2500pF @ 50V
FET Feature
-
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
Part Status
Active
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Mounting Type
Through Hole
Package / Case
TO-220-3
Vgs(th) (Max) @ Id
3.5V @ 46µA
Operating Temperature
-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs
12.3mOhm @ 46A, 10V
Series
OptiMOS™
Power Dissipation (Max)
94W (Tc)
FET Type
N-Channel
Supplier Device Package
PG-TO220-3
Packaging
Tube
Gate Charge (Qg) (Max) @ Vgs
35nC @ 10V