Infineon Technologies IPA65R660CFDXKSA1

Product Details

FET Feature

-

Current - Continuous Drain (Id) @ 25°C

5.5A (Tc)

Part Status

Active

Drive Voltage (Max Rds On, Min Rds On)

10V

Mounting Type

Through Hole

Package / Case

TO-262-3 Short Leads, I²Pak

Vgs(th) (Max) @ Id

4V @ 250µA

Operating Temperature

-55°C ~ 150°C (TJ)

Rds On (Max) @ Id, Vgs

1.2Ohm @ 1.8A, 10V

Series

-

Power Dissipation (Max)

110W (Tc)

FET Type

N-Channel

Supplier Device Package

TO-262S (I2PAK)

Packaging

Tube

Gate Charge (Qg) (Max) @ Vgs

19.4nC @ 10V

Vgs (Max)

±30V

Drain to Source Voltage (Vdss)

800V

Technology

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds

685pF @ 100V