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Infineon Technologies IPA65R310CFDXKSA1
MOSFET N-CH 650V 11.4A TO220
- Manufacturer
- Infineon Technologies
- Datasheet
- Price
- 1.4
- Stock
- 0
Product Details
- Vgs (Max)
- ±20V
- Drain to Source Voltage (Vdss)
- 650V
- Technology
- MOSFET (Metal Oxide)
- Input Capacitance (Ciss) (Max) @ Vds
- 1100pF @ 100V
- FET Feature
- -
- Current - Continuous Drain (Id) @ 25°C
- 11.4A (Tc)
- Part Status
- Active
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Mounting Type
- Through Hole
- Package / Case
- TO-220-3 Full Pack
- Vgs(th) (Max) @ Id
- 4.5V @ 400µA
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs
- 310mOhm @ 4.4A, 10V
- Power Dissipation (Max)
- 32W (Tc)
- Series
- CoolMOS™ CFD2
- Supplier Device Package
- PG-TO220 Full Pack
- FET Type
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs
- 41nC @ 10V